Role of zinc oxide thickness on the photovoltaic performance of laminated organic bulk-heterojunction solar cells
Identifieur interne : 000586 ( Main/Repository ); précédent : 000585; suivant : 000587Role of zinc oxide thickness on the photovoltaic performance of laminated organic bulk-heterojunction solar cells
Auteurs : RBID : Pascal:13-0210415Descripteurs français
- Pascal (Inist)
- Evaluation performance, Matériau stratifié, Cellule solaire organique, Hétérojonction, Epaisseur couche, Morphologie, Propriété électronique, Impureté résiduelle, Travail sortie, Spectrométrie UV, Spectrométrie photoélectron, Alimentation ininterrompue, Planarisation, Addition étain, Topologie, Shunt, Résistance série, Stratification, Couche tampon, Oxyde de zinc, Couche oxyde, Zinc, Acétate, Oxyde d'indium, Matériau poreux, Electronique puissance, Alimentation électrique, ZnO, ITO.
- Wicri :
- concept : Zinc.
English descriptors
- KwdEn :
- Acetate, Buffer layer, Electronic properties, Heterojunction, Indium oxide, Layer thickness, Morphology, Organic solar cells, Oxide layer, Performance evaluation, Photoelectron spectrometry, Planarization, Porous material, Power electronics, Power supply, Residual impurity, Series resistance, Shunt, Stratification, Stratified material, Tin addition, Topology, Ultraviolet spectrometry, Uninterruptible power supply, Work function, Zinc, Zinc oxide.
Abstract
A comprehensive study of zinc oxide (ZnO) film thickness and morphology on the electronic properties of inverted cells is reported. The complete conversion of zinc acetate precursor to 3-5 nm particles of ZnO with no residual acetate is obtained after 10 min at 300 C. The work-function determined by Ultraviolet Photoelectron Spectroscopy (UPS) was 4.3 eV. and is independent of the thickness of the ZnO layer or with the planarization of the ITO surface topology. However, the efficiency varies from 0.6% to 1.7% as the ZnO thickness varies from 17 nm to 28 nm (assuming full density for the ZnO layer) in a laminated device, with both the shunt and series resistance showing a strong variation with ZnO thickness. A relatively thick, mixed phase ZnO/bulk hetero-junction in which the bulk hetero-junction penetrates into the porous ZnO layer is proposed to explain the observed performance trends.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Role of zinc oxide thickness on the photovoltaic performance of laminated organic bulk-heterojunction solar cells</title><author><name sortKey="Sharma, Anirudh" uniqKey="Sharma A">Anirudh Sharma</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Flinders Centre for NanoScale Science and Technology, Flinders University, PO Box 2100</s1><s2>Adelaide SA 5001</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Adelaide SA 5001</wicri:noRegion></affiliation></author><author><name sortKey="Ionescu, Mihail" uniqKey="Ionescu M">Mihail Ionescu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Australian Nuclear Science and Technology Organization, New Illawarra Rd</s1><s2>Lucas Heights, NSW 2234</s2><s3>AUS</s3><sZ>2 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Lucas Heights, NSW 2234</wicri:noRegion></affiliation></author><author><name sortKey="Andersson, Gunther G" uniqKey="Andersson G">Gunther G. Andersson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Flinders Centre for NanoScale Science and Technology, Flinders University, PO Box 2100</s1><s2>Adelaide SA 5001</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Adelaide SA 5001</wicri:noRegion></affiliation></author><author><name sortKey="Lewis, David A" uniqKey="Lewis D">David A. Lewis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Flinders Centre for NanoScale Science and Technology, Flinders University, PO Box 2100</s1><s2>Adelaide SA 5001</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Australie</country><wicri:noRegion>Adelaide SA 5001</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0210415</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0210415 INIST</idno><idno type="RBID">Pascal:13-0210415</idno><idno type="wicri:Area/Main/Corpus">000C17</idno><idno type="wicri:Area/Main/Repository">000586</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acetate</term><term>Buffer layer</term><term>Electronic properties</term><term>Heterojunction</term><term>Indium oxide</term><term>Layer thickness</term><term>Morphology</term><term>Organic solar cells</term><term>Oxide layer</term><term>Performance evaluation</term><term>Photoelectron spectrometry</term><term>Planarization</term><term>Porous material</term><term>Power electronics</term><term>Power supply</term><term>Residual impurity</term><term>Series resistance</term><term>Shunt</term><term>Stratification</term><term>Stratified material</term><term>Tin addition</term><term>Topology</term><term>Ultraviolet spectrometry</term><term>Uninterruptible power supply</term><term>Work function</term><term>Zinc</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Evaluation performance</term><term>Matériau stratifié</term><term>Cellule solaire organique</term><term>Hétérojonction</term><term>Epaisseur couche</term><term>Morphologie</term><term>Propriété électronique</term><term>Impureté résiduelle</term><term>Travail sortie</term><term>Spectrométrie UV</term><term>Spectrométrie photoélectron</term><term>Alimentation ininterrompue</term><term>Planarisation</term><term>Addition étain</term><term>Topologie</term><term>Shunt</term><term>Résistance série</term><term>Stratification</term><term>Couche tampon</term><term>Oxyde de zinc</term><term>Couche oxyde</term><term>Zinc</term><term>Acétate</term><term>Oxyde d'indium</term><term>Matériau poreux</term><term>Electronique puissance</term><term>Alimentation électrique</term><term>ZnO</term><term>ITO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A comprehensive study of zinc oxide (ZnO) film thickness and morphology on the electronic properties of inverted cells is reported. The complete conversion of zinc acetate precursor to 3-5 nm particles of ZnO with no residual acetate is obtained after 10 min at 300 C. The work-function determined by Ultraviolet Photoelectron Spectroscopy (UPS) was 4.3 eV. and is independent of the thickness of the ZnO layer or with the planarization of the ITO surface topology. However, the efficiency varies from 0.6% to 1.7% as the ZnO thickness varies from 17 nm to 28 nm (assuming full density for the ZnO layer) in a laminated device, with both the shunt and series resistance showing a strong variation with ZnO thickness. A relatively thick, mixed phase ZnO/bulk hetero-junction in which the bulk hetero-junction penetrates into the porous ZnO layer is proposed to explain the observed performance trends.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>115</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Role of zinc oxide thickness on the photovoltaic performance of laminated organic bulk-heterojunction solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>SHARMA (Anirudh)</s1></fA11><fA11 i1="02" i2="1"><s1>IONESCU (Mihail)</s1></fA11><fA11 i1="03" i2="1"><s1>ANDERSSON (Gunther G.)</s1></fA11><fA11 i1="04" i2="1"><s1>LEWIS (David A.)</s1></fA11><fA14 i1="01"><s1>Flinders Centre for NanoScale Science and Technology, Flinders University, PO Box 2100</s1><s2>Adelaide SA 5001</s2><s3>AUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Australian Nuclear Science and Technology Organization, New Illawarra Rd</s1><s2>Lucas Heights, NSW 2234</s2><s3>AUS</s3><sZ>2 aut.</sZ></fA14><fA20><s1>64-70</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000503803110100</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>37 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0210415</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>A comprehensive study of zinc oxide (ZnO) film thickness and morphology on the electronic properties of inverted cells is reported. The complete conversion of zinc acetate precursor to 3-5 nm particles of ZnO with no residual acetate is obtained after 10 min at 300 C. The work-function determined by Ultraviolet Photoelectron Spectroscopy (UPS) was 4.3 eV. and is independent of the thickness of the ZnO layer or with the planarization of the ITO surface topology. However, the efficiency varies from 0.6% to 1.7% as the ZnO thickness varies from 17 nm to 28 nm (assuming full density for the ZnO layer) in a laminated device, with both the shunt and series resistance showing a strong variation with ZnO thickness. A relatively thick, mixed phase ZnO/bulk hetero-junction in which the bulk hetero-junction penetrates into the porous ZnO layer is proposed to explain the observed performance trends.</s0></fC01><fC02 i1="01" i2="X"><s0>001D05C</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="X"><s0>001D05H</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Matériau stratifié</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Stratified material</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Material estratificado</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Cellule solaire organique</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Organic solar cells</s0><s5>03</s5></fC03><fC03 i1="04" 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